Solid-State-Drive
Capacity: 256 GB
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 17.6 GB / 7.4 %
Production: Unknown
Released: 2020
Part Number: MZVLB256HBHQ-00000
Market: Consumer
Physical
Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown
Controller
Manufacturer: Samsung
Name: Phoenix (S4LR020)
Architecture: ARM 32-bit Cortex-R7
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)
NAND Flash
Manufacturer: Samsung
Name: V-NAND V5
Part Number: K9CKGY8J5B-CCK0
Type: TLC
Technology: 92-layer
Speed: 533 MT/s .. 1400 MT/s
Capacity: 2 chips @ 1 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 100 per NAND String
92.0% Vertical Efficiency
Read Time (tR): 73 µs
Program Time (tProg): 500 µs
Block Erase Time (tBERS): 3.5 ms
Die Write Speed: 64 MB/s
Page Size: 16 KB
DRAM Cache
Type: LPDDR4-1866
Name: Samsung K4F4E3S4HF-BGCH
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16
Performance
Sequential Read: 3,500 MB/s
Sequential Write: 2,200 MB/s
Random Read: 240,000 IOPS
Random Write: 480,000 IOPS
Endurance: 150 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 12 GB
(9 GB Dynamic
+ 3 GB Static)
Speed when Cache Exhausted: approx. 500 MB/s
Features
TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
AES-256 TCG Opal
RGB Lighting: No
PS5 Compatible: Yes
