Solid state unit Capacity: 120 GB Variants: 120 GB 250 GB 500 GB 1 TB 2 TB Hardware Versions: Samsung V2 120 GB 250 GB 500 GB 1 TB 2 TB Samsung V3 4 TB Supply: 16,2 GB / 14,5 Production: End of life Released: 8 December 2014 Launch Price: 100 USD Part Number: MZ-75E120 Market: Physics Consumers Shape Factor: 2.5 Interface: SATA 6 Gbps Protocol: AHCI Absorption: 0.05 W (inactive) 3,7 W (media) 4,4 W (maximum) Controller Manufacturer: Samsung Name: MGX (S4LN062X01) Architecture: ARM 32-bit Cortex R4 Number of cores: Dual-Core Frequency: 550 MHz Leaf: Samsung Process: 32 nm Flash Channels: 8 Chip Enables: 8 Flash NAND Manufacturer: Samsung Name: V-NAND V2 Part Number: K9OKGY8S7C-CCK0 Type: TLC Technology: 32 layers Speed: 533 MT/s ... 1000 MT/s Capacity: 1 chip to 1 Tbit Topology: MBGYS Charging Process: 40 nm Dimension: 69 mm2 (1,9 Gbit/mm2) Wires for chips: 8 rows to 128 Gbit Plans for die: 1 Plans for die: 1 Word lines: 39 for string NAND 82,1% vertical efficiency Reading time (tR): 45 ?s Programming time (tProg): 700 ?s 88,000 IOPS Resistance: 75 TBW Warranty: 5 Years MTBF: 1.5 million hours Unit Scripture per day (DWPD): 0.3 SLC Writing Cache: about 3 GB (State Only) Speed when the cache is exhausted: about 150 MB/s TRIM Features: Yes SMART: Yes Power loss protection: No Encryption: AES-128 AES-256 TCG Opal RGB Lighting: No Compatible with PS5: No